Research
Our group uses electron and ion microscopy, together with spectroscopy techniques, to study the atomic structure and chemistry of materials for quantum, semiconductor, and spintronic devices. We focus on interfaces, defects, and contacts in heterostructures, and on how growth conditions and fabrication steps alter these features. Reliable conclusions from atomic-scale data require statistics across many regions and samples, which is only practical when both the microscope and the data analysis are automated. For this reason, we develop image processing, denoising, and simulation methods that turn atomic-resolution data into quantitative metrics, as building blocks toward autonomous electron microscopy. Our mission is to connect atomic-scale structure to device performance in ways that guide materials growth and device fabrication.
Interfaces in quantum and electronic materials
Structure, intermixing, and strain at heterointerfaces as they grow.
Read more →Process-induced structural and chemical changes
How annealing, oxidation, etching, and environmental exposure alter interfaces, contacts, and protective layers.
Read more →In situ observation of growth and reactions
Following nucleation, growth, and solid-state reactions as they happen inside the microscope.
Read more →Quantitative and autonomous electron microscopy
Denoising, simulation, and automated acquisition and analysis for statistically meaningful measurements.
Read more →